POWER MOSFETs with Fast Intrinsic Diode
Features:
  • VDSS up 70V to 1200V
  • ID(25): 3A to 340A
  • Avalanche Rated and very rugged, High dv/dt immunity
  • HiPerFET™ Technology gives Fast, Rugged, equally rated intrinsic Diode
  • Low RDS(on)
  • Q2-Class:Very low gate change, very fast switching times
  • Q-Class: Low gate change, fast switching times
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